unisonic technologies co., ltd c6084 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r203-039.g switching regulator applications ? features * high speed. * high breakdown voltage (v cbo =1500v). * high reliability. to-220f to-126 to-3p to-220 1 1 1 1 to-263 1 ? ordering information ordering number package pin description packing lead free halogen free 1 2 3 c6084l-x-ta3 -t c6084g-ta3-x-t to-220 b c e tube c6084l-x-tf3 -t C6084G-TF3-X-T to-220f b c e tube c6084l-x-t60-k c6084g-t60-x-k to-126 b c e bulk c6084l-x-t3p-t c6084g-t3p-x-t to-3p b c e tube c6084l-x-tq2-r c6084g-tq2-x-r to-263 b c e tape reel c6084l-x-tq2-t c6084g-tq2-x-t to-263 b c e tube
c6084 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-039.g ? absolute maximum rating (t a =25 ) parameter symbol ratings unit collector-base voltage to-220/to-220f/to-3p/ to-263 v cbo 1.5 kv to-126 1.4 collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 5 v collector current to-220/to-220f/to-3p/ to-263 i c 5 a to-126 3 to-220/to-220f/to-3p/ to-263 i cp 12 a to-126 6 collector dissipation to-220/ to-263 p c 1.75 w to-220f 1.35 to-126 1.25 to-3p 3.125 junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 ) parameter symbol test conditions min typ max unit collector cutoff current i cbo v cb =800v, i e =0a 10 a collector cutoff current i ces v ce =1500v, r be =0 ? 1.0 ma collector sustain voltage v ceo ( sus ) i c =10ma, i b =0a 800 v emitter cutoff current i ebo v be =4v, i c =0a 1.0 ma collector-emitter saturation voltage to-220/to-220f/ to-263/to-3p v ce(sat) i c =2.7a, i b =0.54a 3 v to-126 i c =1.4a, i b =0.27a 3 base-emitter saturation voltage to-220/ to-220f/ to-263/to-3p v be(sat) i c =2.7a, i b =0.54a 1.5 v to-126 i c =1.4a, i b =0.27a 1.5 dc current gain h fe1 v ce =5v, i c =0.5a 10 25 to-220/to-220f/ to-263/to-3p h fe2 v ce =5v, i c =3a 5 8 to-126 v ce =5v, i c =1.8a 5 8 fall time t f i c =1.8a, i b1 =0.36a, i b2 =-0.72a 0.2 s ? classification of h fe1 rank a b c range 10 ~ 15 15 ~ 20 20 ~ 25
c6084 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-039.g ? test circuit rl=111 ? r b 50 ? p w =20s d.c. 1% input i b1 i b2 v r 100f v be =-5v 470f output v cc =200v
c6084 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-039.g ? typical characteristics 0 collector current vs. bv ces collector current , i c (ma) collector-emitter breakdown voltage ,bv ces (kv) 0.6 1.2 0.2 0.4 0.8 1.0 1.4 0 0 collector current vs. bv cbo collector current , i c (ma) collector-base breakdown voltage ,bv cbo (kv) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.6 1.8 0.6 1.2 0.2 0.4 0.8 1.0 1.4 0 0 emitter current vs. bv ebo emitter current , i e (ma) emitter-base breakdown voltage ,bv ebo (v) 0.6 1.2 20 5 10 15 0.2 0.4 0.8 1.0 1.4 1.6 1.8 0 collector current vs. v ceo(sus) collector current , i c (ma) collector-emitter voltage ,v ceo(sus) (kv) 6 12 2 4 8 10 14 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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